type STD181GK08B std181gk12b std181gk14b std181gk16b std181gk18b std181gk20b std181gk22b v rrm v drm v 800 1200 1400 1600 1800 2000 2200 v rsm v dsm v 900 1300 1500 1700 1900 2100 2300 dimensions in mm (1mm=0.0394") symbol test conditions maximum ratings unit t vj =t vjm t c =85 o c; 180 o sine 300 181 a t vj =45 o c t=10ms (50hz), sine v r =0 t=8.3ms (60hz), sine t vj =t vjm t=10ms(50hz), sine v r =0 t=8.3ms(60hz), sine 6000 6400 5250 5600 a i tsm , i fsm t vj =45 o c t=10ms (50hz), sine v r =0 t=8.3ms (60hz), sine t vj =t vjm t=10ms(50hz), sine v r =0 t=8.3ms(60hz), sine 180000 170000 137000 128000 a 2 s i 2 dt (di/dt) cr 150 500 a/us (dv/dt) cr t vj =t vjm ; v dr =2/3v drm r gk = ; method 1 (linear voltage rise) 1000 v/us p gm t vj =t vjm t p =30us i t =i tavm t p =500us 120 60 w p gav 8 w i trms , i frms i tavm , i favm o c t vj t vjm t stg -40...+125 125 -40...+125 v isol 50/60hz, rms t=1min i isol <1ma t=1s 3000 3600 v~ m d mounting torque (m6) terminal connection torque (m6) _ 2.25-2.75/20-25 4.5-5.5/40-48 nm/lb.in. weight 173 g t vj =t vjm repetitive, i t =500a f=50hz, t p =200us v d =2/3v drm i g =0.5a non repetitive, i t =i tavm di g /dt=0.5a/us v rgm 10 v typ ical thyristor-diode modules std181gkxxb p1 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
symbol t est conditions characteristic v alues unit v v t , v f it, i f=54 0a; tvj=25 o c 1.65 v t o f or p o w er-loss calculations only (t vj =t vjm ) 0.8 v r t 1.6 m v d =6 v ; t vj =25 o c t vj =-40 o c v gt 2 2.6 v v d =6 v ; t vj =25 o c t vj =-40 o c i gt 150 200 ma v gd t vj =t vjm ; v d =2/3v drm 0.25 v i gd 10 ma i h t vj =25 o c ; v d =6 v ; r gk = 150 ma t vj =25 o c ; t p =30us ; v d =6v i g =0.45a ; di g /dt=0.45a/us 200 ma i l per t h y r istor/diode ; dc current per module r thjc 0.155 0.0775 k/w per t h y r istor/diode ; dc current per module r thjk 0.225 0.1125 k/w d s creeping distance on sur f ace 12.7 mm d a creepage distance in air 9.6 mm a maxi m um all o w a b le accele r ation 50 m/s 2 i rrm , i drm t vj =t vjm ; v r =v rrm ; v d =v drm 40 ma t vj =25 o c ; v d =1/2v drm i g =0.5a ; di g /dt=0.5a/us t gd 2 us t vj =t vjm ; i t =160a ; t p =200us ; -di/dt=10a/us ty p . v r =100 v ; dv/dt=20v/us ; v d =2/3v drm t q 150 us uc q s t vj =t vjm ; i t , i f =300a ; -di/dt=50a/us 550 i rm 235 a a d v an t a ges * space and w eight s a vings * simple mounting * impr o v ed tempe r ature and p o w er cycling * reduced protection circuits applic a tions * motor control * p o w er co n v e r ter * heat and tempe r ature control f or indust r ial fu r naces and chemical processes * lighting contro l * contactless s witches t vj =t vjm ; v d =2/3v drm fe a tures * inte r national standard pa c kage * glass passi v ated chips * isolation v oltage 3600 v~ * ul file no.e310749 * rohs compliant * copper base plate thyristor-diode modules std181gkxx b p2 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
0 0 p tav i tav 50 w a fig.1l power dissipation per thyristor vs. on-state current 0 0 p tav 50 w 100 100 fig.1r power dissipation per thyristor vs. ambient t e mp t a c o 150 k/w r th(j-a) 0 0 pvtot i rms 100 w a fig.2l power dissipation per module vs. rms current 100 0 0 50 w 100 fig.2r power dissipation per module vs. case temp t a c o c o 150 k/w r th(c - a) pvtot 0 0 pvtot w a fig.3l power dissipation of two modules vs. direct current 100 i d 0 0 50 w 100 fig.3 r power dissipation of two modules vs. case temp t a t c c o c o 150 k/w pvtot r th(c-a) r 200 100 100 150 std181 b 1/2 . rec. 15 30 60 90 120 sin. 180 rec. 180 cont. 300 400 200 200 300 1 std181b . t c 100 200 300 400 200 300 200 200 500 400 500 125 116 107 98 89 1000 400 l 1000 125 116 107 98 89 80 0.08 300 300 2.5 2 1.6 1.2 1 0.8 0.7 0.6 0.5 0.45 0.4 0.35 0.3 0.25 0.2 80 1 0.8 0.5 0.6 0.4 0.3 0.25 0.2 0.17 0.14 0.1 0.12 0.07 0.04 0.02 200 400 600 800 1200 200 400 600 800 1200 71 0.5 0.4 0.3 0.25 0.2 0.16 0.12 0.1 0.06 0.07 0.04 0.02 0.05 0.03 thyristor-diode modules std181gk xx b std 181b 2 . p3 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
std . 181 b 0 0 p vto t pvtot i rms 100 200 w a f ig.4l power dissipation of three modules vs. direct and rms current 50 0 i d w 3 b 6 0 0 50 w 100 fig.4r power dissipation of three modules vs. case temp t a t c c o c o 150 k/w 500 3 . s td1 81b 10 a/us fig.5 recovered charge vs. current decrease 100 1 /2 uc tvj= c o 0 0.001 0.01 k/w 100 fig.6 transient thermal impedance vs. time t zth std181b 1 /2 . zth(j-s) zth( j -c) 0.1 1 10 s std181b . 0 0 100 200 fig.7 on-st ate charactristics 1 /2 a i t vt 0.5 1 1.5 2 v typ. max. fig.8 surge overload current vs. time i tm= 1 t 10 100 ms 1000 0.4 0.6 0.8 1 1.2 1.4 1.6 i t(ov) i tsm 2 std181b 1 /2 . 1 v rrm . 0.5 v rrm . 0 v rrm . i tsm(25 c) =5400a o i tsm(125 c)=5000a o 125 100 1000 10000 qrr 1 -di /dt t 300 tvj=25 c o _ tvj=125 c o 400 1500 1500 125 115 105 95 85 75 0.06 0.05 0.1 0.15 0.2 0.25 0.3 400 500 600 500 0.3 0.2 0.25 0.16 0.12 0.1 0.08 0.07 0.05 0.04 0.03 0.02 rth(c-a) a 20 a 50 a 100 a 200 a 500 thyristor-diode modules std181gk xx b p4 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
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